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| 2SK3770-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg VISO Ratings 120 90 26 104 30 26 342.2 3.7 20 5 37 2.16 +150 -55 to +150 2 Unit V V A A V A mJ mJ Remarks VGS=-30V Equivalent circuit schematic Drain(D) Gate(G) Note *1 Note *2 Note *3 Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=11A,L=3.77mH, VCC=48V,RG=50 EAS limited by maximum channel temperature kV/s VDS<120V = and Avalanche current. kV/s Note *4 See to the `Avalanche Energy' graph Tc=25C W Note *3:Repetitive rating:Pulse width limited by Ta=25C maximum channel temperature. C See to the `Transient Thermal impedance' C graph. kVrms t=60sec. f=60Hz < < < Note *4:IF = -ID, -di/dt = 50A/s,VCC= BVDSS,Tch=150C Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=120V VGS=0V VDS=96V VGS=0V VGS=30V VDS=0V ID=13A VGS=10V ID=13A VDS=25V VDS=75V VGS=0V f=1MH VCC=48V ID=13A VGS=10V RGS=10 VCC=60V ID=26A VGS=10V IF=26A VGS=0V Tch=25C IF=26A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Tch=25C Tch=125C 63 12 760 170 11 13 5 20 7.5 26 12 7 1.00 130 0.7 Min. 120 3.0 Typ. Max. 5.0 25 250 100 78 1140 255 17 20 7.5 30 11 39 18 11 1.50 Units V V A A nA m S pF 6 ns nC V ns C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 3.378 58 Units C/W C/W 1 2SK3770-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 50 60 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 20V 10V 50 40 40 30 ID [A] 8.0V 30 7.5V 20 PD [W] 20 7.0V 6.5V 6.0V VGS=5.5V 10 10 0 0 25 50 75 100 125 150 0 0 1 2 3 4 5 6 Tc [C] VDS [V] 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0.1 0.1 gfs [S] 0 1 2 3 4 5 6 7 8 9 10 1 10 100 VGS[V] ID [A] 0.24 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 6.5V 7.0V 7.5V 8.0V 0.18 0.16 0.14 0.12 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=13A,VGS=10V VGS=5.5V 6.0V 0.20 RDS(on) [ ] 0.16 RDS(on) [ ] 0.10 max. 0.08 0.06 0.04 0.02 0.12 10V 0.08 20V typ. 0.04 0 10 20 30 40 50 60 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3770-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=26A,Tch=25 C 12 Vcc=60V 10 max. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 35 40 2 4 min. VGS [V] 8 6 Tch [C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 100 10 3 Ciss 10 C [pF] Coss 10 2 IF [A] 1 0.1 0.00 10 1 Crss 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 tf 2 400 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=26A IAS=11A 350 10 300 td(off) 250 IAS=16A EAV [mJ] t [ns] 200 IAS=26A td(on) 10 1 150 tr 100 50 10 0 0 10 -1 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3770-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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